PART |
Description |
Maker |
IS42VM32200G |
512K x 32Bits x 4Banks Low Power Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
W9864G2IB |
512K X 4 BANKS X 32BITS SDRAM
|
Winbond
|
W9864G2IB |
512K × 4 BANKS × 32BITS SDRAM
|
Winbond
|
M52L32321A-7.5BG M52L32321A-10BG M52L32321A-6BG |
512K x 32Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
M52D16161A-10BIG M52D16161A-10TIG M52D16161A-6BIG |
512K x 16Bit x 2Banks Mobile Synchronous DRAM
|
Elite Semiconductor Memory ... Elite Semiconductor Memory Technology Inc.
|
W9864G2JH-6A W9864G2JH-6I W9864G2JH-7 W9864G2JH13 |
512K x 4 BANKS x 32BITS SDRAM 512K x 4 BANKS x 32BITS SDRAM
|
Winbond
|
T431616D-7SG T431616D-7C T431616D-7CG T431616E-7C |
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM 100万16内存12k × 16Bit的X 2Banks同步DRAM
|
TM Technology, Inc. Electronic Theatre Controls, Inc.
|
EM411M1612VTA EM404M1614VTA EM404M1612VTA EM402M16 |
16Mb ( 2Banks ) Synchronous DRAM 16兆(2Banks)同步DRAM
|
Electronic Theatre Controls, Inc.
|
P412025 PS4125 P411825 P412225 P412425 |
POW-R-BLOK Single Diode Isolated Module (2500 Amperes / Up to 2400 Volts) POW - r的,单台BLOk反应腔二极管隔离模块(二五?安高达2400伏特
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
HY57V643220DLT-55 HY57V643220DTP-45 HY57V643220DT- |
4Banks x 512K x 32bits Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PDSO86
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
M52D16161A-10TG |
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50
|
Elite Semiconductor Memory Technology, Inc.
|
M12L16161A-5TIG M12L16161A-7BIG M12L16161A-7TIG M1 |
1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50 512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|